APS Global Physics Summit Logo March 16–21, 2025, Anaheim, CA and virtual
Contributed Session
March

Superconducting Qubits: More Metal and Nitride Films

3:00 pm – 6:00 pm, Thursday March 20 Session MAR-T18 Anaheim Convention Center, 162 (Level 1)
Chair:
Katarina Cicak, National Institute of Standards and Technology (NIST)
Topics:
Sponsored by
DQI

High-quality factor superconducting devices using Rhenium

3:48 pm – 4:00 pm
Presenter: Francesco Crisa (Fermi National Accelerator Laboratory)
Authors: Jae-Yel Lee (Fermi National Accelerator Laboratory), Sabrina Garattoni (Fermilab), Shaojiang Zhu (Fermi National Accelerator Laboratory (Fermilab)), Adam Clairmont (Fermi National Accelerator Laboratory), Zuhawn Sung (Fermi National Accelerator Laboratory (FNAL)), Laura Grassellino (Ferm National Accelerator Laboratory), John Zasadzinski (Illinois Institute of Technology), Akshay Murthy (Fermi National Accelerator Laboratory), Alexander Romanenko (Fermi National Accelerator Laboratory), Mustafa Bal (Fermi National Accelerator Laboratory), Anna Grassellino (Fermi National Accelerator Laboratory)

Coplanar waveguide resonators are a perfect tool to evaluate the losses induced by defects and interfaces in superconducting devices. Even if niobium is the most used superconductor for resonators and qubits, its native oxide at the metal-air (MA) interface limits the device results. Tantalum has recently significantly improved qubit performances due to a thinner and less disordered oxide layer compared to Nb. To further improve the MA interface, we used rhenium, a superconducting material with 1.7 K critical temperature resistant to oxidation: it forms an oxide layer thinner than 1 nm. In this study, we will present a thorough investigation of rhenium CPW resonator measurements with internal quality factors at the single photon level exceeding 2 million. The devices have been fabricated on a sapphire substrate while the processing parameters have been varying and optimized. The measurements have been performed as a function of power and temperature to disentangle different sources of losses, such as two-level systems (TLS) and quasi-particles. A peculiar TLS temperature dependence has been measured and analyzed. In this work, we also vary the participation ratio of the devices to extract the losses introduced by the involved interfaces with higher fidelity and precision. We carried on a deep material characterization effort to link the results to the differences in the fabrication steps, and we will present material characterization measurements performed via AFM, ToF-SIMS, XPS, and TEM.

PRESENTATIONS (15)