Spin-Qubit Characterization and Modeling
Semi-automated device design and simulation of SiMOS quantum dot devices
8:48 am – 9:00 amSilicon quantum dot devices represent a promising platform for quantum computing due to their scalability and integration with classical CMOS process. Simulating and modelling these devices is essential for understanding their electronic properties, optimising their design, and predicting their behaviour in qubit implementations. However, the complexity of quantum dot systems, which involves potential generation, state calculation, and the interaction between different quantum dots, requires an efficient workflow.
In this work we present an automated simulation workflow for quantum dot devices, integrating geometry generation, mesh processing, and wave function analysis. By automating key steps such as mesh generation, surface tagging, and visualization, we accelerate the overall simulation process. This approach not only studies variation on device configurations but also provides a framework for exploration of device performance under different bias conditions. This workflow allows us to automatically output the tunnel coupling, lever arms, coulomb interaction matrix and exchange also with charge stability generation which can be compared and contrasted with real world device data.
The automation of this modelling workflow will become crucial for scaling up the design and simulation of quantum dot devices, ultimately contributing to the realisation of practical quantum computing.